SiC Crystal Growth Furnace allows, in a specific atmosphere, silicon carbide materials to undergo vapor phase transport, chemical reactions, etc., ultimately growing high-quality SiC monocrystal silicon ingot on a seed.
Size
6inch/8inch
Convexity during crystal growth
1-3mm
High-precision intelligent control system, customized service
Multi-zone high-precision control
Leverage intelligent control system to achieve remote centralized control
High output, high stability and optimal space utilization
Customized solutions available
Professional simulation software
Use STR, a professional simulation software, to simulate the entire growth cycle of SiC ingot, providing comprehensive growth solutions to customers.
Intelligent control
Leverage intelligent control system to achieve remote centralized control.
Customizable
Offer customized heating method (resistance heating/induction heating) as needed.
Client Service
Provide customers with hot zone design and optimization services, cooperate to tackle process challenges.
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+86-0510-81816658
sales@wxautowell.com
No.3 Xinhua Road,
