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1600 Czochralski Monocrystal Growth Furnace
 
Czochralski Monocrystal Growth Furnace can melt the silicon materials via the graphite resistance heater in an inert atmosphere (Argon, Nitrogen) and then grow dislocation-free monocrystal silicon ingot through CZ method automatically.
  • 10”Rod

    170+kg/d

  • 12”Rod

    185+kg/d

Oxygen content reduced by 40% 
The unique oxygen content reduction solution of SCEC can effectively reduce the oxygen
content in Mono-Si ingot by 40% and improve the efficiency of N-type 210 cells by 0.1%-0.2%

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