The laser enhanced metallization (LEM) technique can significantly reduce the contact resistance between silicon and electrodes in TOPCon cells, leading to higher open-circuit voltage and fill factor and enhancing the efficiency of cells.
CT
0.7s@182*182 cell
Great improvement of N-type cell efficiency (TOPCon: 0.2-0.5%)
Strong compatibility: suitable for 18x~230 cells;
Great efficiency improvement:
the large square spot scanning technique contributes to great cell efficiency boost.
Strong compatibility
fast switchover for 18X~230 cells.
High capacity
the high-speed galvo enables rapid scanning and extremely short cycle time.