Semiconductor Products
Crystal Growth Furnace for Silicon Components
It can melt the silicon materials via the graphite resistance heater in an inert atmosphere, and then grow dislocation-free monocrystal silicon ingot (used for silicon components) though CZ method automatically. It is suitable for 24’’ ingot and compatible with superconducting magnetic field.
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Diameter of pull chamber
650mm
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Capable of growing ultra-large ingot
26'
Large size, high quality
High precision control system
Sophisticated monitoring and feedback system & Optional magnetic field & Capable of growing 26' ultra-large ingot used for silicon components
Sophisticated monitoring and feedback system & Optional magnetic field & Capable of growing 26' ultra-large ingot used for silicon components
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High precision controlThe precision control and long-term stable operation of the equipment can be assured with the features of complete magnetic field control system, brand-new software control system, vision system and ultra-high-precision transmission system. -
Large sizeSupport all the mainstream ingot sizes on the market, with the largest size up to 26'. -
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CustomizableOffer customized products by developing solutions on hot zone structure, magnetic field configuration and others to serve the various needs of customers.