SiC Crystal Growth Furnace

Multi-zone high-precision control
Leverage intelligent control system to achieve remote centralized control
High output, high stability and optimal space utilization
Customized solutions available

The Crystal Growth Furnace for Silicon Materials is a critical piece of equipment for growing high-purity, high-quality mono-Si ingots. It typically uses the Czochralski method to grow mono-Si ingots. It melts the silicon materials via the graphite heater in an inert atmosphere, and then dips the seed into the silicon melt. By accurately controlling the seed lift/rotation speed and the crucible lift/rotation speed, silicon atoms are arranged in an orderly, layer-by-layer fashion onto the seed, thereby growing dislocation-free mono-Si ingots. It boasts technical advantages such as large-diameter design, accurate temperature control, and automatic control; the diameter of the ingots grown ranges from Φ360-Φ600mm, with a minimum length of 2m.