Semiconductor Products
SiC Crystal Growth Furnace
SiC Crystal Growth Furnace allows, in a specific atmosphere, silicon carbide materials to undergo vapor phase transport, chemical reactions, etc., ultimately growing high-quality SiC monocrystal silicon ingot on a seed.
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Size
6inch/8inch
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Convexity during crystal growth
1-3mm
High-precision intelligent control system, customized service
Multi-zone high-precision control
Leverage intelligent control system to achieve remote centralized control
High output, high stability and optimal space utilization
Customized solutions available
The Crystal Growth Furnace for Silicon Materials is a critical piece of equipment for growing high-purity, high-quality mono-Si ingots. It typically uses the Czochralski method to grow mono-Si ingots. It melts the silicon materials via the graphite heater in an inert atmosphere, and then dips the seed into the silicon melt. By accurately controlling the seed lift/rotation speed and the crucible lift/rotation speed, silicon atoms are arranged in an orderly, layer-by-layer fashion onto the seed, thereby growing dislocation-free mono-Si ingots. It boasts technical advantages such as large-diameter design, accurate temperature control, and automatic control; the diameter of the ingots grown ranges from Φ360-Φ600mm, with a minimum length of 2m.
Leverage intelligent control system to achieve remote centralized control
High output, high stability and optimal space utilization
Customized solutions available
The Crystal Growth Furnace for Silicon Materials is a critical piece of equipment for growing high-purity, high-quality mono-Si ingots. It typically uses the Czochralski method to grow mono-Si ingots. It melts the silicon materials via the graphite heater in an inert atmosphere, and then dips the seed into the silicon melt. By accurately controlling the seed lift/rotation speed and the crucible lift/rotation speed, silicon atoms are arranged in an orderly, layer-by-layer fashion onto the seed, thereby growing dislocation-free mono-Si ingots. It boasts technical advantages such as large-diameter design, accurate temperature control, and automatic control; the diameter of the ingots grown ranges from Φ360-Φ600mm, with a minimum length of 2m.
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